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Référence fabricant

IR2011STRPBF

IR2011S Series Dual 20 V Surface Mount High and Low Side Driver - SOIC-8N

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
Infineon IR2011STRPBF - Caractéristiques techniques
Attributes Table
Configuration: High and Low Side
No of Outputs: Dual
Peak Output Current: 1A
Supply Voltage-Max: 20V
Rated Power Dissipation: 0.625W
Quiescent Current: 140µA
Turn-off Delay Time: 75ns
Turn-on Delay Time: 80ns
Rise Time: 35ns
Fall Time: 20ns
Operating Temp Range: -40°C to +125°C
Style d'emballage :  SOIC-8N
Méthode de montage : Surface Mount
Fonctionnalités et applications
The IR2011STRPBF is a high power, high speed power MOSFET driver, available in surface mount SOIC-8 package.

This device comes with independent high and low side referenced output channels which is ideal for Audio Class D and DC-DC converter applications. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Features:

  • Floating channel designed for bootstrap operation
  • Fully operational up to +200 V
  • Tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 10 V to 20 V
  • Independent low and high side channels
  • Input logicHIN/LIN active high
  • Undervoltage lockout for both channels
  • 3.3 V and 5 V input logic compatible
  • CMOS Schmitt-triggered inputs with pull-down
  • Matched propagation delay for both channels
  • Also available LEAD-FREE (PbF)

Applications:

  • Audio Class D amplifiers
  • High power DC-DC SMPS converters
  • Other high frequency applications
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
20 Semaines
Commande minimale :
2500
Multiples de :
2500
Total 
1 975,00 $
USD
Quantité
Prix unitaire
2 500+
$0.79
Product Variant Information section