Référence fabricant
IXFN80N50
500V 80A 55mOhm N-ch SOT-227
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| Nom du fabricant: | Littelfuse - IXYS | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :10 par Tube Méthode de montage :Chassis Mount | ||||||||||
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Littelfuse - IXYS IXFN80N50 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
Littelfuse - IXYS IXFN80N50 - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 500V |
| Drain-Source On Resistance-Max: | 55mΩ |
| Rated Power Dissipation: | 780|W |
| Qg Gate Charge: | 380nC |
| Méthode de montage : | Chassis Mount |
Fonctionnalités et applications
IXYS is a state of the art leader in MOSFET technology through the IXFN series. This cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.
The ruggedness that this technology offers combined with a low resistance factor results in very low power dissipation, in low voltage, and high current power switching applications. This series features wide-ranging operating junction temperatures (–55 degrees C to 150 degrees C) and is ideal for applications that require large amounts of power.
By delivering superior performance, in its MOSFET series, backed by higher efficiency, lower conduction losses and greater power density, IXYS firmly believes in innovation through its divisional focused approach. This has enabled IXYS to become well diversified in the consumer, military & aerospace, automotive and transportation markets.
Perfect for both commercial and industrial applications, the IXFN80N50 (this part is lead free) has the capacity to operate at 500 V within an operating temperature range of 150 degrees C. The net result translates to a lower resistance (RDS (on) = 55 mOhms). Avalanche rated, the IXFN80N50 is able to reduce power dissipation levels to approximately 694 watts. The IXFN80N50 provides high speed, robust efficiency combined with low on-resistance and cost-effectiveness all in a SOT-227B package format.
Emballages disponibles
Qté d'emballage(s) :
10 par Tube
Méthode de montage :
Chassis Mount