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Référence fabricant
STGB18N40LZT4
STGB18N40LZ Series 390 V 30 A Surface Mount Internally Clamped IGBT - D2PAK
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| Nom du fabricant: | STMicroelectronics | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :1000 par Reel Style d'emballage :TO-263-3 (D2PAK) Méthode de montage :Surface Mount | ||||||||||
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STMicroelectronics STGB18N40LZT4 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=STGB18N40LZT4&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/es/p/semiconductors--discretes--transistors--igbts/stgb18n40lzt4-stmicroelectronics-6799928
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=STGB18N40LZT4&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/es/p/semiconductors--discretes--transistors--igbts/stgb18n40lzt4-stmicroelectronics-6799928
STMicroelectronics STGB18N40LZT4 - Caractéristiques techniques
| CE Voltage-Max: | 420V |
| Collector Current @ 25C: | 30A |
| Power Dissipation-Tot: | 150W |
| Gate - Emitter Voltage: | 12V to 16V |
| Pulsed Collector Current: | 40A |
| Collector - Emitter Saturation Voltage: | 1.3V |
| Turn-on Delay Time: | 0.65µs |
| Turn-off Delay Time: | 13.5µs |
| Qg Gate Charge: | 29nC |
| Leakage Current: | 625µA |
| Input Capacitance: | 490pF |
| Thermal Resistance: | 62.5°C/W |
| Operating Temp Range: | -55°C to +175°C |
| No of Terminals: | 3 |
| Style d'emballage : | TO-263-3 (D2PAK) |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The STGB18N40LZT4 is a application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system.
Features:
- AEC Q101 compliant
- 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
- ESD gate-emitter protection
- Gate-collector high voltage clamping
- Logic level gate drive
- Low saturation voltage
- High pulsed current capability
- Gate and gate-emitter resistor
Applications:
- Pencil coil electronic ignition driver
Emballages disponibles
Qté d'emballage(s) :
1000 par Reel
Style d'emballage :
TO-263-3 (D2PAK)
Méthode de montage :
Surface Mount