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Référence fabricant
IRFU120NPBF
Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :75 par Tube Style d'emballage :IPAK Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
Infineon IRFU120NPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Reprocessed previous announcement issued under Future PCN 96119, to update system for replacements.Detailed change information:Subject Amendment of Environmental Flag with/without Change of Ordering Code (OPN# and SP#).Reason :To Reflect the Correct Environmental Flag at Production Sites for Each Product.
Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Sichuan Gen Microelectronics co.LTD, China for dedicated GEN5 and GEN7 N-Channel MOSFET productsReason The wafer production of the affected products will be transferred to Sichuan Gen Microelectronics co.LTD, China, according to global Infineon production strategy
Reason: To Reflect the Correct Environmental Flag at Production Sites for Each Product Amendment of Environmental Flag with/without Change of Ordering Code (OPN# and SP#) Reason: To Reflect the Correct Environmental Flag at Production Sites for Each Product Please see MFR PCN for part number changes
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFU120NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/es/p/semiconductors--discretes--transistors--mosfets/irfu120npbf-infineon-8115149
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFU120NPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/es/p/semiconductors--discretes--transistors--mosfets/irfu120npbf-infineon-8115149
Infineon IRFU120NPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.21Ω |
| Rated Power Dissipation: | 48W |
| Qg Gate Charge: | 25nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 9.4A |
| Turn-on Delay Time: | 4.5ns |
| Turn-off Delay Time: | 32ns |
| Rise Time: | 23ns |
| Fall Time: | 23ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Input Capacitance: | 330pF |
| Style d'emballage : | IPAK |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
75 par Tube
Style d'emballage :
IPAK
Méthode de montage :
Through Hole