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Référence fabricant
SQ2303ES-T1_GE3
Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :SOT-23 (SC-59,TO-236) Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Vishay SQ2303ES-T1_GE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Description of Change: The affected part number listed in this notification will be converted from gold wire bond to a copper wire material set. The new ordering code is SQ2303CES-T1_GE3 which has identical silicon technology and silicon die design as SQ2303ES. Small changes to the data sheet AC parameters are a consequence of lot-to-lot variation and/or updated characterization methods (reference: SQ2303CES Doc # 62455 Rev. A).Last Time Buy Date: Monday November 10, 2025Last Time Ship Date: Sunday May 10, 2026Reason for Change:Standardization of materials
Revision in SQ2303ES Datasheet from Rev. C to Rev. DDescription of Change: As part of Vishay Siliconix commitment to Quality, we would like to extend to you a courtesy advisory notification of a datasheet revision for SQ2303ES (Doc #67023 Rev D attached). There is no change to the materials or processes used in the manufacture of this part.The changes per this Advisory reflect updates as follows:Minimum specification for Rg change from 6.04 Ohms to 2.8 OhmsThis notification is for information only and there is no need for a response.Reason for Change: Datasheet Revision
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SQ2303ES-T1_GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/es/p/semiconductors--discretes--transistors--mosfets/sq2303es-t1-ge3-vishay-9107554
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SQ2303ES-T1_GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/es/p/semiconductors--discretes--transistors--mosfets/sq2303es-t1-ge3-vishay-9107554
Vishay SQ2303ES-T1_GE3 - Caractéristiques techniques
| Product Status: | Active |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 0.17Ω |
| Rated Power Dissipation: | 1.9W |
| Qg Gate Charge: | 4.5nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 2.5A |
| Turn-on Delay Time: | 5ns |
| Turn-off Delay Time: | 12ns |
| Rise Time: | 8ns |
| Fall Time: | 8ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2V |
| Input Capacitance: | 168pF |
| Style d'emballage : | SOT-23 (SC-59,TO-236) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
SOT-23 (SC-59,TO-236)
Méthode de montage :
Surface Mount