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Référence fabricant

2N3055G

2N Series NPN 115 W 60 V 15 A Flange Mount Power Transistor - TO-3

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Code de date:
Product Specification Section
onsemi 2N3055G - Caractéristiques techniques
Attributes Table
Polarity: NPN
Type: Power Transistor
CE Voltage-Max: 60V
Collector Current Max: 15A
Power Dissipation-Tot: 115W
Collector - Base Voltage: 100V
Collector - Emitter Saturation Voltage: 3V
Emitter - Base Voltage: 7V
DC Current Gain-Min: 2
Collector - Current Cutoff: 700nA
Configuration: Single
Frequency - Transition: 2.5MHz
Operating Temp Range: -65°C to +200°C
Style d'emballage :  TO-3 (TO-204)
Méthode de montage : Flange Mount
Fonctionnalités et applications

The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.

Features:

  • DC Current Gain - hFE = 20-70 @ IC = 4 Adc
  • Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
  • Excellent Safe Operating Area
  • Pb-Free Packages are Available

Learn more about the 2N family of Bipolar Transistors

Pricing Section
Stock global :
0
États-Unis:
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Sur commande :Order inventroy details
50 000
Stock d'usine :Stock d'usine :
0
Délai d'usine :
15 Semaines
Commande minimale :
400
Multiples de :
100
Total 
836,00 $
USD
Quantité
Prix unitaire
100
$2.13
200
$2.11
300
$2.10
400
$2.09
500+
$2.06