Référence fabricant
HGTD1N120BNS9A
HGTD1N120BNS9A Series N-Channel 1200 V 5.3 A Surface Mount IGBT - TO-252AA
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :2500 par Reel Style d'emballage :TO-252AA Méthode de montage :Surface Mount |
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onsemi HGTD1N120BNS9A - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Statut du produit:
onsemi HGTD1N120BNS9A - Caractéristiques techniques
| CE Voltage-Max: | 1200V |
| Collector Current @ 25C: | 5.3A |
| Power Dissipation-Tot: | 60W |
| Turn-on Delay Time: | 15ns |
| Turn-off Delay Time: | 67ns |
| Style d'emballage : | TO-252AA |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The HGTD1N120BNS9A is a N-Channel Non-punch Through (NPT) IGBT Transistor. It combines the best features of MOSFETs and bipolar transistors. This device has the high input impedence of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The IGBT is deal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contractors.
Features:
- 5.3 A, 1200 V, Tc=25°C
- 1200 V switching SOA Capability
- Typical Eoff = 120µJ at Tj=150°C
- Short Circuit Rating
- Low Conduction Loss
- Avalanche Rated
Applications:
- Military
- Industrial
- Consumer
Emballages disponibles
Qté d'emballage(s) :
2500 par Reel
Style d'emballage :
TO-252AA
Méthode de montage :
Surface Mount