text.skipToContent text.skipToNavigation

Référence fabricant

HGTD1N120BNS9A

HGTD1N120BNS9A Series N-Channel 1200 V 5.3 A Surface Mount IGBT - TO-252AA

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
onsemi HGTD1N120BNS9A - Caractéristiques techniques
Attributes Table
CE Voltage-Max: 1200V
Collector Current @ 25C: 5.3A
Power Dissipation-Tot: 60W
Turn-on Delay Time: 15ns
Turn-off Delay Time: 67ns
Style d'emballage :  TO-252AA
Méthode de montage : Surface Mount
Fonctionnalités et applications

The HGTD1N120BNS9A is a N-Channel Non-punch Through (NPT) IGBT Transistor. It combines the best features of MOSFETs and bipolar transistors. This device has the high input impedence of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT is deal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contractors.

Features:

  • 5.3 A, 1200 V, Tc=25°C
  • 1200 V switching SOA Capability
  • Typical Eoff = 120µJ at Tj=150°C
  • Short Circuit Rating
  • Low Conduction Loss
  • Avalanche Rated

Applications:

  • Military
  • Industrial
  • Consumer

 

 

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
17 Semaines
Commande minimale :
2500
Multiples de :
2500
Total 
1 625,00 $
USD
Quantité
Prix unitaire
2 500
$0.65
5 000
$0.645
7 500
$0.64
10 000
$0.635
12 500+
$0.625
Product Variant Information section