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Référence fabricant

FDC3601N

Dual N-Channel 100 V 500 mOhm SMT Specified PowerTrench Mosfet - SSOT-6

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Code de date: 2507
Product Specification Section
onsemi FDC3601N - Caractéristiques techniques
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 500mΩ
Rated Power Dissipation: 700|mW
Qg Gate Charge: 3.7nC
Style d'emballage :  SSOT-6
Méthode de montage : Surface Mount
Fonctionnalités et applications

The FDC3601N is a FDC series of 100 V 500 mOhm Dual N-Ch Specified PowerTrench Mosfet and is available in SSOT-6 package .

These N-Channel 100V specified MOSFETs are produced with an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Product Features :

  • 1.0 A, 100 V
  • RDS(on) = 500 mΩ@ VGS = 10 V
  • RDS(on) = 550 mΩ @ VGS = 6 V
  • Low gate charge (3.7nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8); low profile (1mm thick).

Applications :

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Access
  • Military & Civil Aerospace
Pricing Section
Stock global :
6 000
États-Unis:
6 000
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
20 Semaines
Commande minimale :
3000
Multiples de :
3000
Total 
645,00 $
USD
Quantité
Prix unitaire
3 000
$0.215
9 000
$0.21
30 000+
$0.205