Référence fabricant
IPB020N10N5LFATMA1
IPB020N10N5LF Series 100 V 176 A 2 mOhm Single N-Channel MOSFET - TO-263-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :1000 par Reel Style d'emballage :TO-263-3 (D2PAK) Méthode de montage :Surface Mount |
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| Code de date: | 2443 | ||||||||||
Infineon IPB020N10N5LFATMA1 - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Subject Introduction of 300mm wafer diameter at Infineon Technologies Austria AG and Infineon Technologies Dresden GmbH & Co. KG.Reason Next phase of Front End capacity expansion by introduction of 300mm wafer diameter to support continuous increasing demand.Intended start of delivery 2022-12-31 or earlier based on customer approval
Statut du produit:
Infineon IPB020N10N5LFATMA1 - Caractéristiques techniques
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 2mΩ |
| Rated Power Dissipation: | 313W |
| Qg Gate Charge: | 195nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 176A |
| Turn-on Delay Time: | 7ns |
| Turn-off Delay Time: | 128ns |
| Rise Time: | 28ns |
| Fall Time: | 82ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3.3V |
| Technology: | OptiMOS |
| Input Capacitance: | 650pF |
| Series: | OptiMOS 5 |
| Style d'emballage : | TO-263-3 (D2PAK) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
1000 par Reel
Style d'emballage :
TO-263-3 (D2PAK)
Méthode de montage :
Surface Mount