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Référence fabricant

IPDD60R050G7XTMA1

N-Channel 600 V 50 mOhm 68 nC CoolMOS™ G7 Power Transistor - HDSOP-10

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
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Product Specification Section
Infineon IPDD60R050G7XTMA1 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 50mΩ
Rated Power Dissipation: 278W
Qg Gate Charge: 68nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 47A
Turn-on Delay Time: 22ns
Turn-off Delay Time: 72ns
Rise Time: 6ns
Fall Time: 3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Height - Max: 2.35mm
Length: 15.6mm
Input Capacitance: 2670pF
Style d'emballage :  HDSOP-10
Méthode de montage : Surface Mount
Fonctionnalités et applications

Double DPAK (DDPAK) Innovative top-side cooled SMD solution for high power applications.

Infineon Technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V CoolMOS™ G7 superjunction (SJ) MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
17 Semaines
Commande minimale :
1700
Multiples de :
1700
Total 
7 939,00 $
USD
Quantité
Prix unitaire
1 700+
$4.67
Product Variant Information section