Référence fabricant
IPDD60R050G7XTMA1
N-Channel 600 V 50 mOhm 68 nC CoolMOS™ G7 Power Transistor - HDSOP-10
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :1700 par Reel Style d'emballage :HDSOP-10 Méthode de montage :Surface Mount | ||||||||||
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Infineon IPDD60R050G7XTMA1 - Spécifications du produit
Informations de livraison:
ECCN:
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Infineon IPDD60R050G7XTMA1 - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 50mΩ |
| Rated Power Dissipation: | 278W |
| Qg Gate Charge: | 68nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 47A |
| Turn-on Delay Time: | 22ns |
| Turn-off Delay Time: | 72ns |
| Rise Time: | 6ns |
| Fall Time: | 3ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3V |
| Technology: | CoolMOS |
| Height - Max: | 2.35mm |
| Length: | 15.6mm |
| Input Capacitance: | 2670pF |
| Style d'emballage : | HDSOP-10 |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
Double DPAK (DDPAK) Innovative top-side cooled SMD solution for high power applications.
Infineon Technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V CoolMOS™ G7 superjunction (SJ) MOSFETis combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies
Emballages disponibles
Qté d'emballage(s) :
1700 par Reel
Style d'emballage :
HDSOP-10
Méthode de montage :
Surface Mount