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Référence fabricant
IRF8734TRPBF
Single N-Channel 30 V 3.5 mOhm 20 nC HEXFET® Power Mosfet - SOIC-8
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :4000 par Reel Style d'emballage :SOIC-8 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Infineon IRF8734TRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF8734TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irf8734trpbf-infineon-2183582
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF8734TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irf8734trpbf-infineon-2183582
Infineon IRF8734TRPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 3.5mΩ |
| Rated Power Dissipation: | 2.5|W |
| Qg Gate Charge: | 20nC |
| Style d'emballage : | SOIC-8 |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
International Rectifier, IR® a world leader in power management technology, introduced a series of new 25V and 30V N-channel trench HEXFET® power MOSFETs featuring enhanced switching performance for synchronous buck converter and battery protection in computing applications for consumer and networking sectors.
The new family of MOSFETs utilizes IR’s proven silicon technology to deliver benchmark on-state resistance (RDS(on)) and improved switching performance. The devices’ low conduction losses improve full-load efficiency and thermal performance while low switching losses help to achieve high efficiency even at light loads.
The new MOSFETs are also offered in a Power QFN package to provide improved power density when compared with an SO-8 package while keeping the same pin-out configuration.
Single and dual N-channel MOSFETs are available. Single devices are offered in a PQFN 5x6mm and 3x3mm package optimized for high volume production in addition to D-PAK, I-PAK and SO-8 packages while dual devices are offered in an SO-8 package. The new devices are RoHS compliant and can be offered as Halogen free.
The IRF8734TRPBF is an N-channel, 30V MOSFET with a current rating of 21 Amps. The device has a max rating of 3.5 Mohms, and is offered in a TO-220 package
Emballages disponibles
Qté d'emballage(s) :
4000 par Reel
Style d'emballage :
SOIC-8
Méthode de montage :
Surface Mount