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Référence fabricant

STB14NK50ZT4

N-Channel 500 V 11 A 380 mOhm 150 W Surface Mount Power Mosfet - D2PAK

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STB14NK50ZT4 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 380mΩ
Rated Power Dissipation: 150|W
Qg Gate Charge: 92nC
Style d'emballage :  TO-263-3 (D2PAK)
Méthode de montage : Surface Mount
Fonctionnalités et applications

The STB14NK50ZT4 is a Zener-protected SuperMESHTM Power MOSFET.

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Features:

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatibility

Applications:

  • Switching application
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
13 Semaines
Commande minimale :
1000
Multiples de :
1000
Total 
2 270,00 $
USD
Quantité
Prix unitaire
1 000
$2.27
2 000
$2.25
3 000+
$2.23
Product Variant Information section