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Référence fabricant
STB21N65M5
N-Channel 710 V 17 A 179 mOhm 125 W Surface Mount Power Mosfet - D2PAK
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| Nom du fabricant: | STMicroelectronics | ||||||||||
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Product Variant Information section
Emballages disponiblesQté d'emballage(s) :1000 par Reel Style d'emballage :TO-263-3 (D2PAK) |
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STMicroelectronics STB21N65M5 - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Statut du produit:
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=STB21N65M5&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/stb21n65m5-stmicroelectronics-1001245
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=STB21N65M5&field4=STMicroelectronics&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/stb21n65m5-stmicroelectronics-1001245
STMicroelectronics STB21N65M5 - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 150Ω |
| Rated Power Dissipation: | 125|W |
| Qg Gate Charge: | 50nC |
| Style d'emballage : | TO-263-3 (D2PAK) |
Fonctionnalités et applications
The STB21N65M5 is a N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET. These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.
The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features:
- 100% avalanche tested
- Worldwide best RDS(on) * area
- Higher VDSS rating
- High dv/dt capability
- Excellent switching performance
Applications:
- Switching applications
Emballages disponibles
Qté d'emballage(s) :
1000 par Reel
Style d'emballage :
TO-263-3 (D2PAK)