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Référence fabricant

STP3NK80Z

N-Channel 800 V 4.5 Ohm Flange Mount SuperMESH™ Power MosFet - TO-220

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STP3NK80Z - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 4.5Ω
Rated Power Dissipation: 70|W
Qg Gate Charge: 19nC
Style d'emballage :  TO-220-3 (TO-220AB)
Méthode de montage : Flange Mount
Fonctionnalités et applications

The STP3NK90Z is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Features:

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability

Applications:

  • Switching applications

View the Complete family of STP3 Mosfet Transistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
13 Semaines
Commande minimale :
2000
Multiples de :
1000
Total 
1 300,00 $
USD
Quantité
Prix unitaire
1 000
$0.655
2 000
$0.65
3 000
$0.645
5 000
$0.635
10 000+
$0.625
Product Variant Information section