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Référence fabricant

TSSF4500

890 nm 100 mA ±22° Side View Through Hole High Speed Infrared Emitting Diode

Modèle ECAD:
Nom du fabricant: Vishay
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
Vishay TSSF4500 - Caractéristiques techniques
Attributes Table
Wavelength: 890nm
Angle of Half Intensity: ±22°
Intensity: 20mW/cm2
Forward (Drive) Current: 100mA
Forward Voltage: 1.35V
Méthode de montage : Through Hole
Fonctionnalités et applications

The TSSF4500 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. It has an Operating temperature ranges b/w -40 °C to 100 °C.

Features:

  • Package type: leaded
  • Package form: side view
  • Dimensions (L x W x H in mm): 4.5 x 4 x 4.8
  • Peak wavelength: λp = 890 nm
  • High reliability
  • High radiant power
  • High radiant intensity
  • Angle of half intensity: ? = ± 22°
  • Low forward voltage
  • Suitable for high pulse current operation
  • High modulation bandwidth: fc = 12 MHz
  • Good spectral matching with Si photodetectors

Applications:

  • Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements
  • TSSF4500 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK - coded, 450 kHz or 1.3 MHz)
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
6 Semaines
Commande minimale :
4000
Multiples de :
4000
Total 
1 300,00 $
USD
Quantité
Prix unitaire
4 000+
$0.325
Product Variant Information section