text.skipToContent text.skipToNavigation

Référence fabricant

STM6503REAADG6F

MLPD/DFN 2X2X0.75 8L PITCH 0.5

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STM6503REAADG6F - Caractéristiques techniques
Attributes Table
No of Outputs: Dual
Threshold Voltage: 2.625|V
Supply Voltage-Max: 7V
Reset Timeout: 140ms
Style d'emballage :  TDFN-8
Méthode de montage : Surface Mount
Fonctionnalités et applications

The STM6503REAADG6F is a part of STM65xx Series Dual push-button Smart Reset with user-adjustable setup delays. It has an Operating temperature ranges b/w -40 °C to 85 °C and available in a TDFN8 (2 mm x 2 mm x 0.75 mm) Package.

The Smart Reset device family STM65xx provides a useful feature that ensures inadvertent short reset push-button closures do not cause system resets. This is done by implementing extended Smart Reset input delay (tSRC). Once the valid Smart Reset input levels and setup delay are met, the device generates an output reset pulse with user-programmable timeout period (tREC).

Features:

  • Dual Smart Reset push-button inputs with extended reset setup delay
  • Adjustable Smart Reset setup delay (tSRC): by external capacitor or three-state logic (product options): tSRC = 2, 6, 10 s (min.)
  • Power-on reset
  • Single RST output, active-low, open-drain
  • Factory-programmable thresholds to monitor VCC in the range of 1.575 to 4.625 V typ.
  • Operating voltage 1.0 V (active-low output valid) to 5.5 V
  • Low supply current

Applications:

  • Mobile phones, smartphones
  • e-books
  • MP3 players
  • Games
  • Portable navigation devices
  • Any application that requires delayed reset push-button(s) response for improved system stability
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
24 Semaines
Commande minimale :
3000
Multiples de :
3000
Total 
2 685,00 $
USD
Quantité
Prix unitaire
3 000+
$0.895
Product Variant Information section