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Référence fabricant
V12P10-M3/86A
V12P10 Series 100 V 12 A SMT Trench MOS Barrier Schottky Rectifier - TO-277A
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :1500 par Reel Style d'emballage :TO-277A Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2510 | ||||||||||
Vishay V12P10-M3/86A - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Top Metal Conversion for Commercial Grade Solderable TMBS DESCRIPTION OF CHANGEVishay Diodes Division would like to announce the process conversion for solderable TMBS (Trench MOS Barrier Schottky) wafers from Ti/Ni/Ag to Ti/Al/Ni/Ag. There will be no change in form, fit or function of final products. REASON FOR CHANGEThis process consolidation in order to improve production shop-floor control and manufacturing equipment utilization, as well as delivery.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=V12P10-M3/86A&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--diodes--scottky-rectifiers/v12p10-m3-86a-vishay-8894925
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=V12P10-M3/86A&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--diodes--scottky-rectifiers/v12p10-m3-86a-vishay-8894925
Vishay V12P10-M3/86A - Caractéristiques techniques
| Average Rectified Current-Max: | 12A |
| Peak Current-Max: | 200A |
| Reverse Voltage-Max [Vrrm]: | 100V |
| Reverse Current-Max: | 7µA |
| Forward Voltage: | 0.7V |
| Style d'emballage : | TO-277A |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The V12P10-M3/86A is a High current density trench MOS barrier schottky rectifier with average rectified forward current of 12 A and reverse voltage of 100 V. Available in TO-277A package.
Features:
- Very low profile - typical height of 1.1 mm
- Ideal for automatic placement
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified
- Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Applications:
- Low voltage high frequency inverters
- Freewheeling
- DC-to-DC converters
- Polarity protection applications
Emballages disponibles
Qté d'emballage(s) :
1500 par Reel
Style d'emballage :
TO-277A
Méthode de montage :
Surface Mount