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STMicroelectronics | STI21N65M5

Manufacturer Part #

STI21N65M5

Single N-Channel 650 V 0.179 Ohm 50 nC 125 W Silicon Through Hole Mosfet TO-262

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STI21N65M5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.179Ω
Rated Power Dissipation: 125W
Qg Gate Charge: 50nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 17A
Operating Temp Range: -55°C to +155°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 4.6mm
Length: 10.4mm
Input Capacitance: 1950pF
Package Style:  TO-262 (I2PAK)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,180.00
USD
Quantity
Unit Price
1,000
$2.18
2,000
$2.17
3,000
$2.16
4,000+
$2.14
Product Variant Information section