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Manufacturer Part #
SI4435DYTRPBF
Single P-Channel 30 V 0.02 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:4000 per Reel Package Style:SOIC-8 Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Infineon SI4435DYTRPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SI4435DYTRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/2587947
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SI4435DYTRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/2587947
Infineon SI4435DYTRPBF - Technical Attributes
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 0.02Ω |
| Rated Power Dissipation: | 2.5|W |
| Qg Gate Charge: | 40nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 8A |
| Turn-on Delay Time: | 16ns |
| Turn-off Delay Time: | 130ns |
| Rise Time: | 76ns |
| Fall Time: | 90ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1V |
| Technology: | PowerTrench |
| Height - Max: | 1.75mm |
| Length: | 5mm |
| Input Capacitance: | 2320pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
4000 per Reel
Package Style:
SOIC-8
Mounting Method:
Surface Mount