STU12N60M2 in Tube by STMicroelectronics | Mosfets | Future Electronics
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STMicroelectronics | STU12N60M2

Manufacturer Part #

STU12N60M2

N-Channel 600 V 450 mOhm Through Hole MDmesh M2 Power Mosfet - IPAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1841
Product Specification Section
STMicroelectronics STU12N60M2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.45Ω
Rated Power Dissipation: 85W
Qg Gate Charge: 16nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 9A
Turn-on Delay Time: 9.2ns
Turn-off Delay Time: 5ns
Rise Time: 9.2ns
Fall Time: 18ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: MDmesh
Input Capacitance: 538pF
Package Style:  IPAK
Mounting Method: Through Hole
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1
Multiple Of:
1
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Total
$0.69
USD
Quantity
Unit Price
1
$0.685
50
$0.665
200
$0.65
750
$0.63
2,500+
$0.60
Product Variant Information section