
Référence fabricant
SIA477EDJT-T1-GE3
P-Channel 12 V 13 mOhm 19 W TrenchFET Gen III Mosfet- PowerPAK SC-70-6L
Vishay SIA477EDJT-T1-GE3 - Spécifications du produit
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Description of Change: To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Reason for Change: Manufacturing Capacity Expansion
Description of Change: .To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments.Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Reason for Change: Manufacturing Capacity Expansion
Statut du produit:
Vishay SIA477EDJT-T1-GE3 - Caractéristiques techniques
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 12V |
Drain-Source On Resistance-Max: | 13mΩ |
Rated Power Dissipation: | 3.5W |
Qg Gate Charge: | 55nC |
Gate-Source Voltage-Max [Vgss]: | 8V |
Drain Current: | 12A |
Turn-on Delay Time: | 10ns |
Turn-off Delay Time: | 90ns |
Rise Time: | 20ns |
Fall Time: | 46ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1V |
Input Capacitance: | 3050pF |
Style d'emballage : | POWERPAK-SC-70-6L |
Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
POWERPAK-SC-70-6L
Méthode de montage :
Surface Mount