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Manufacturer Part #

IRFB7437PBF

Single N-Channel 40 V 2 mOhm 225 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2420
Product Specification Section
Infineon IRFB7437PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 2mΩ
Rated Power Dissipation: 230W
Qg Gate Charge: 150nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 250A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 78ns
Rise Time: 70ns
Fall Time: 53ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: Si
Input Capacitance: 7330F
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

The IRFB7437PBF is a single N-channel HEX-Power MOSFET.

Benefits:

  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability
  • Lead-Free

Applications:

  • Brushed Motor drive applications
  • BLDC Motor drive applications
  • Battery powered circuits
  • Half-bridge and full-bridge topologies
  • Synchronous rectifier applications
  • Resonant mode power supplies
  • OR-ing and redundant power switches
  • DC/DC and AC/DC converters
  • DC/AC Inverters

 

Pricing Section
Global Stock:
800
USA:
800
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$35.25
USD
Quantity
Unit Price
50
$0.705
250
$0.685
1,000
$0.665
2,500
$0.655
6,250+
$0.63
Product Variant Information section