Les commandes expédiées à l’extérieur des États-Unis seront en attente pendant que l’entreprise évalue les impacts tarifaires.Veuillez contacter votre vendeur pour obtenir de l’aide.
Livraison gratuite aux États-Unis continentaux à partir de 50 $ US. Des conditions s'appliquent
Référence fabricant
SQJ463EP-T1_GE3
MOSFET 40V 30A 83W AEC-Q101
| | |||||||||||
| | |||||||||||
| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :POWERPAK-SO-8L Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Vishay SQJ463EP-T1_GE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
PI Material Improved Definition Process Change May 2023Description of Change: Change of Polyimide material from DUR 116A to LTC 9320 using a photo defined process. There will be nolimitation in performance or reliability. Please note this is the same process change as prior PCN-SIL-0112022 (PI Material ImprovedDefinition Process Change) that you may have received in June 2022. This PCN represents the next set of parts to receive the new PI material. If you have already approved the prior PCN, the qualification data and process change for these parts are exactly the same and your expedited approval of the PCN is requested.Classification of Change: Capacity ExpansionVishay Brand(S): Vishay SiliconixTime Schedule:Start Shipment Date: Mon Sep 25, 2023
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SQJ463EP-T1_GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/p/discretes--transistors--mosfets/sqj463ep-t1-ge3-vishay-3066010
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SQJ463EP-T1_GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/p/discretes--transistors--mosfets/sqj463ep-t1-ge3-vishay-3066010
Vishay SQJ463EP-T1_GE3 - Caractéristiques techniques
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 10mΩ |
| Rated Power Dissipation: | 83W |
| Qg Gate Charge: | 98nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 30A |
| Turn-on Delay Time: | 21ns |
| Turn-off Delay Time: | 121ns |
| Rise Time: | 17ns |
| Fall Time: | 51ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2V |
| Input Capacitance: | 4700pF |
| Style d'emballage : | POWERPAK-SO-8L |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
POWERPAK-SO-8L
Méthode de montage :
Surface Mount