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NXP | BFU760F,115

Manufacturer Part #

BFU760F,115

BFU760 Series 2.8 V 25.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4

ECAD Model:
Mfr. Name: NXP
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
NXP BFU760F,115 - Technical Attributes
Attributes Table
Polarity: NPN
Type: RF
CE Voltage-Max: 2.8V
Collector Current Max: 70mA
Power Dissipation-Tot: 220mW
Collector - Base Voltage: 10V
Emitter - Base Voltage: 1V
DC Current Gain-Min: 155
Collector - Current Cutoff: 100nA
Configuration: Single
Frequency - Transition: 45GHz
Noise Figure: 0.75dB
Moisture Sensitivity Level: 1
Package Style:  SOT-343F-4
Mounting Method: Surface Mount
Features & Applications

The BFU760F Series is a NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Features:

  • Low noise high linearity RF transistor
  • High maximum output third-order intercept point 32 dBm at 1.8 GHz
  • 110 GHz fT silicon germanium technology

Applications:

  • Ka band oscillators DRO’s
  • High linearity applications
  • Medium output power applications
  • Wi-Fi / WLAN / WiMAX
  • GPS
  • ZigBee
  • SDARS first stage LNA
  • LTE, cellular, UMTS

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
N/A
Minimum Order:
6000
Multiple Of:
3000
Total
$1,008.00
USD
Quantity
Unit Price
3,000
$0.171
6,000
$0.168
9,000
$0.167
12,000
$0.166
15,000+
$0.164
Product Variant Information section