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Référence fabricant
IRF7313TRPBF
Single N-Channel 30 V 0.046 Ohm 33 nC HEXFET® Power Mosfet - SOIC-8
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :4000 par Reel Style d'emballage :SOIC-8 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Infineon IRF7313TRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Reprocessed previous announcement issued under Future PCN 96119, to update system for replacements.Detailed change information:Subject Amendment of Environmental Flag with/without Change of Ordering Code (OPN# and SP#).Reason :To Reflect the Correct Environmental Flag at Production Sites for Each Product.
Information on change of Orderable Part Number and Sales Product Number for dedicated SO8 and PQFN 3.3X3.3 products Please be informed that due to IT related changes an update of the products Orderable Part Number (OPN) and Sales Product (SP) Number was required, having no impact on the product itself. This means no change in fit, form or function compared what was delivered before the necessary adoption. IFX now reflects the halogen free status/PB free status in OPN.
Reason: To Reflect the Correct Environmental Flag at Production Sites for Each Product Amendment of Environmental Flag with/without Change of Ordering Code (OPN# and SP#) Reason: To Reflect the Correct Environmental Flag at Production Sites for Each Product Please see MFR PCN for part number changes
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF7313TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irf7313trpbf-infineon-8579237
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF7313TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irf7313trpbf-infineon-8579237
Infineon IRF7313TRPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 0.046Ω |
| Rated Power Dissipation: | 2W |
| Qg Gate Charge: | 33nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 6.5A |
| Turn-on Delay Time: | 8.1ns |
| Turn-off Delay Time: | 26ns |
| Rise Time: | 8.9ns |
| Fall Time: | 17ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1V |
| Technology: | Generation V |
| Height - Max: | 1.5mm |
| Length: | 5mm |
| Input Capacitance: | 650pF |
| Style d'emballage : | SOIC-8 |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The IRF7313TRPBF is a fifth generation HEXFET that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-08 has been modified through a customerized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramtically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. For more information, please see the datasheet above.
Emballages disponibles
Qté d'emballage(s) :
4000 par Reel
Style d'emballage :
SOIC-8
Méthode de montage :
Surface Mount