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Manufacturer Part #

MRFE6VP61K25NR6

MRFE6VP Series 133 V 230 MHz Dual Channel RF Power LDMOS Transistor - OM-1230-4L

ECAD Model:
Mfr. Name: NXP
Standard Pkg:
Date Code:
Product Specification Section
NXP MRFE6VP61K25NR6 - Technical Attributes
Attributes Table
Fet Type: RF Fet
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 133V
Rated Power Dissipation: 3333W
Gate-Source Voltage-Max [Vgss]: 10V
Operating Temp Range: -40°C to +225°C
Gate Source Threshold: 2.2V
Height - Max: 3.86mm
Length: 32.33mm
Input Capacitance: 562pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
150
Multiple Of:
150
Total
$31,185.00
USD
Quantity
Web Price
150+
$207.90