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STMicroelectronics | STB26NM60N

Manufacturer Part #

STB26NM60N

N-Channel 600 V 0.165 Ohm Surface Mount MDmesh II Power MosFet - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
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Product Variant Information section
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Product Specification Section
STMicroelectronics STB26NM60N - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 165mΩ
Rated Power Dissipation: 140|W
Qg Gate Charge: 60nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The STB26NM60N is a N-channel 600 V, 0.135 Ω, 20 A MDmesh™ II Power MOSFET. These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to yield a device with one of the world’s lowest on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters.

Features:

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$4,000.00
USD
Quantity
Unit Price
1,000+
$4.00
Product Variant Information section