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Manufacturer Part #

STP11NK50Z

Single N-Channel 500 V 125 W 68 nC Silicon Through Hole Mosfet - TO-220-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP11NK50Z - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 0.52Ω
Rated Power Dissipation: 125W
Qg Gate Charge: 49nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 10A
Turn-on Delay Time: 14.5ns
Turn-off Delay Time: 41ns
Rise Time: 18ns
Fall Time: 15ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.75V
Input Capacitance: 1390pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$1,190.00
USD
Quantity
Unit Price
1
$1.24
40
$1.23
150
$1.21
750
$1.19
2,500+
$1.16
Product Variant Information section