Manufacturer Part #
SST39SF Series 2 Mbit 256 K x 8 5 V Multi-Purpose Flash - PDIP-32
|Standard Pkg:|| |
Product Variant Information section
11 per Tube
Revision History:July 09, 2019: Issued initial notification.October 28, 2019: Issued final notification. Attached the qualification report. Provided estimated first ship date to be on November 28, 2019.Final Notice: Qualification of MTAI as a new final test site for selected products of the 0.25 um wafer technology available in 32L PDIP (0.600 in) package. Pre Change: Tested at KYE final test sitePost Change: Tested at MTAI final test siteReason for Change:To improve on-time delivery performance by qualifying MTAI as a new final test site.
CCB 3832 Initial Notice: Qualification of MTAI as a new final test site for selected products of the 0.25 um wafer technology available in 32L PDIP (0.600 in) package.PCN Status: Initial notificationPCN Type: Manufacturing ChangeDescription of Change: Qualification of MTAI as a new final test site for selected products of the 0.25 um wafer technology available in 32L PDIP (0.600 in) package. Pre Change: Tested at KYE final test sitePost Change: Tested at MTAI final test siteChange Impact: NoneReason for Change: To improve on-time delivery performance by qualifying MTAI as a new final test site.Change Implementation Status: In Progress Estimated Qualification Completion Date: September 2019Note: Please be advised the qualification completion times may be extended because of unforeseen business conditions however implementation will not occur until after qualification has completed and a final PCN has been issued. The final PCN will include the qualification report and estimated first ship date. Also note that after the estimated first ship date guided in the final PCN customers may receive pre and post change parts.Method to Identify Change: Traceability code Qualification Plan: Please open the attachments included with this PCN labeled as PCN_#_Qual_Plan.
|Memory Organization:||256 K x 8|
|Supply Voltage-Nom:||4.5V to 5.5V|
|Mounting Method:||Through Hole|
Features & Applications
CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. This device writes (Program or Erase) with a 4.5-5.5V power supply, and conforms to JEDEC standard pinouts for x8 memories.
Featuring high performance Byte-Program, provides a maximum Byte-Program time of 20 µsec (microsecond). Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 10,000 cycles. Data retention is rated at greater than 100 years.
It is suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during erase and program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. This device also improves flexibility while lowering the cost for program, data, and configuration storage applications.
To meet high density, surface mount requirements, offered in 32-lead PLCC and 32-lead TSOP packages. A 600 mil, 32-pin PDIP is also available.
11 per Tube