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onsemi Silicon Carbide (SiC) JFETs
Powering efficiency by scaling for the future
onsemi's Silicon Carbide (SiC) JFET selection features a set of high-performance, normally-on JFET transistors with VDS-max ranging from 650V to 1700V. They provide high switching frequency and deliver ultra-low on-resistance (RDS (on)) starting at just 4 mohm, utilizing less than half the die size of any other technology.
Low gate charge (Qg) enables further reductions in both conduction and switching losses. The extensive selection of SiC JFETs by onsemi are optimized for one of the uses in Power Supply Units (PSUs) and downstream high-voltage DC-DC conversion to handle the enormous power requirements of future AI Data Center Racks.
They improve efficiency and safety by replacing multiple components with a solid-state switch based on SiC JFETs in EV battery disconnect units.
Furthermore, they enable certain Energy Storage topologies and Solid-State Circuit Breakers (SSCBs).
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