onsemi — Silicon Carbide (SiC) JFETs | Futureelectronics NorthAmerica Site
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onsemi Silicon Carbide (SiC) JFETs

Powering efficiency by scaling for the future

onsemi's Silicon Carbide (SiC) JFET selection features a set of high-performance, normally-on JFET transistors with VDS-max ranging from 650V to 1700V. They provide high switching frequency and deliver ultra-low on-resistance (RDS (on)) starting at just 4 mohm, utilizing less than half the die size of any other technology.

Low gate charge (Qg) enables further reductions in both conduction and switching losses. The extensive selection of SiC JFETs by onsemi are optimized for one of the uses in Power Supply Units (PSUs) and downstream high-voltage DC-DC conversion to handle the enormous power requirements of future AI Data Center Racks.

They improve efficiency and safety by replacing multiple components with a solid-state switch based on SiC JFETs in EV battery disconnect units.

Furthermore, they enable certain Energy Storage topologies and Solid-State Circuit Breakers (SSCBs).

Features

  • Industry’s lowest RDS,ON and best soft-switching figure-of-merit (RDS,ON*COSS,TR, EOFF)
  • Compatible with industry standard gate drivers
  • Excellent body diode
    • Vf < 2V
    • Very low Qrr

 

  • Integrated ESD & gate protection
  • Superior thermal performance
    • Silver sinter die attach
    • Advanced wafer thinning

Applications

  • Energy Storage
  • Solid State Circuit Breakers
  • Automotive
  • Battery charging

 

  • Power delivery
  • Renewable energy
  • Circuit protection