text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Diodes
  5. Switching Diodes
  6. HN2D02FUTW1T1G

onsemi | HN2D02FUTW1T1G

Manufacturer Part #

HN2D02FUTW1T1G

HN2D02 Series 85 V 100 mA 3 ns Ultra High Speed Switching Diode - SC-88

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi HN2D02FUTW1T1G - Technical Attributes
Attributes Table
Type: Silicon Epitaxial Planar
Configuration: Triple
Reverse Current-Max: 0.5µA
Forward Voltage: 1.2V
Reverse Voltage-Max [Vrrm]: 85V
Reverse Recovery Time-Max: 3ns
Power Dissipation: 300mW
Diode Capacitance-Max: 2pF
Average Forward Current-Max: 100mA
Operating Temp Range: -55°C to +150°C
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Features & Applications
The HN2D02FUTW1T1G is a part of HN2D02FUTW1 series ultra high speed switching diodes. It has a storage temperature ranging from -55°C to +150°C and its available in SC-88 package.

The Switching Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-88 package, which is designed for low power surface mount applications.

Features:

  • Fast trr, < 3.0 ns
  • Low CD, < 2.0 pF
  • AEC−Q101 Qualified and PPAP Capable
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
12000
Multiple Of:
3000
Total
$680.40
USD
Quantity
Unit Price
3,000
$0.0583
6,000
$0.0573
9,000
$0.0567
15,000
$0.056
30,000+
$0.0545
Product Variant Information section