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Infineon | BSZ100N06NSATMA1

Manufacturer Part #

BSZ100N06NSATMA1

BSZ100xx Series 100 V 40 A 9.7 mOhm OptiMOS™ Power-MOSFET - TSDSON-8 FL

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2530
Product Specification Section
Infineon BSZ100N06NSATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 10mΩ
Rated Power Dissipation: 2.1W
Qg Gate Charge: 12nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 40A
Turn-on Delay Time: 6ns
Turn-off Delay Time: 10ns
Rise Time: 2ns
Fall Time: 2ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.8V
Technology: OptiMOS
Input Capacitance: 860pF
Package Style:  TSDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany:
0
On Order:Order inventroy details
20,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,225.00
USD
Quantity
Unit Price
5,000
$0.245
10,000+
$0.24
Product Variant Information section