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Référence fabricant
FQB34N20LTM
FQB34N20L Series 200 V 31 A 75 mOhm SMT N-Channel QFET Mosfet - D2PAK-3
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :800 par Reel Style d'emballage :TO-263-3 (D2PAK) Méthode de montage :Surface Mount |
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| Code de date: | 2527 | ||||||||||
onsemi FQB34N20LTM - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Statut du produit:
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onsemi FQB34N20LTM - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 75mΩ |
| Rated Power Dissipation: | 3.13|W |
| Qg Gate Charge: | 55nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 31A |
| Turn-on Delay Time: | 45ns |
| Turn-off Delay Time: | 170ns |
| Rise Time: | 520ns |
| Fall Time: | 370ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2V |
| Height - Max: | 4.83mm |
| Length: | 10.67mm |
| Style d'emballage : | TO-263-3 (D2PAK) |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The FQB34N20L is a 200 V 0.075 Ω N-Channel enhancement mode power field effect transistors are produced using DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Features:
- 31 A, 200 V, RDS(on) = 0.075 Ω @VGS = 10 V
- Low gate charge ( typical 55 nC)
- Low Crss ( typical 52 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Low level gate drive requirement allowing direct operation from logic drivers
- RoHS Compliant
Applications:
- High efficiency switching DC/DC converters
- Switch mode power supply,
- Motor control
- Audio amplifier
Emballages disponibles
Qté d'emballage(s) :
800 par Reel
Style d'emballage :
TO-263-3 (D2PAK)
Méthode de montage :
Surface Mount