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Référence fabricant
IRF9530NSTRLPBF
Single P-Channel 100V 0.2 Ohm 58 nC HEXFET® Power Mosfet - D2PAK
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :800 par Reel Style d'emballage :TO-263-3 (D2PAK) Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2505 | ||||||||||
Infineon IRF9530NSTRLPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason :The wafer production of the affected products will be transferred to Infineon Technologies Kulim, according to global Infineon production strategy.
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF9530NSTRLPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irf9530nstrlpbf-infineon-4174104
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF9530NSTRLPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irf9530nstrlpbf-infineon-4174104
Infineon IRF9530NSTRLPBF - Caractéristiques techniques
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | -100V |
| Drain-Source On Resistance-Max: | 0.2Ω |
| Rated Power Dissipation: | 3.8W |
| Qg Gate Charge: | 58nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | -14A |
| Turn-on Delay Time: | 15ns |
| Turn-off Delay Time: | 45ns |
| Rise Time: | 58ns |
| Fall Time: | 46ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | -4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 4.83mm |
| Length: | 10.67mm |
| Input Capacitance: | 760pF |
| Style d'emballage : | TO-263-3 (D2PAK) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
800 par Reel
Style d'emballage :
TO-263-3 (D2PAK)
Méthode de montage :
Surface Mount