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Référence fabricant
SISA04DN-T1-GE3
MOSFET 30V 2.15MOHM@10V 40A N-CH G-IV
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :POWERPAK-1212-8 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Vishay SISA04DN-T1-GE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Description of Change: Due to the fire accident in Jan-2023, the original plating subcon of Vishay Siliconix, Welnew-Wuxi, is suspended and will be entirely replaced by the new site in Shanghai, China (Welnew-Shanghai). This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai. Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments. Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Expected Influence on Quality/Reliability/Performance: There will be no effect on quality, reliability, performance, and the minimum/maximum values in the datasheet.Time Schedule:Start Shipment Date: Wed Jul 5, 2023
Description of Change: The wafer plating process for commercial power MOSFET products will move to a new building within the same Laguna Technopark. Classification of Change: In order to increase the capacity, Vishay Siliconix has moved the Philippines wafer plating facility in a larger building with the same equipment, same process, and same personnel.m Expected Influence on Quality/Reliability/Performance: There will be no effect on performance, quality or reliability and no change to form, fit, or function of the shipped devices.Vishay Brand(S): Vishay Siliconix Time Schedule: Start Shipment Date: Mon Feb 6, 2023
PCN UPDATE - FPCN 95348Potential delivery interruption for the selected Power MOSFETs due to the fire accident at Welnew Wuxi factory and the adoption of the alternative site in Vishay Tianjin.Description of Change: This advisory is being provided to you as an announcement that due to the fire accident on 2023/1/6 afternoon at Welnew Wuxi factory (China), the plating subcon of Vishay Siliconix, it?s expected the delivery interruption on specific part types, including TSOP-6, TO-236 (SOT-23), SO-8, PowerPAK 1212-8, Thin PowerPAK 1212-8, PowerPAK SO-8, and 1206-8 ChipFET. The detail part list of each package is attached in the following pages of this advisory.Currently all the production activities in Welnew Wuxi plant have been suspended. Vishay Siliconix is cooperating closely with Welnew to restart the alternative production line in Welnew Shanghai. The necessary equipment setup and qualification is estimated to take up to 5 months to get completed and ready for the normal production in May, 2023.During this period, we expect the delivery interruptions in January and February while these could be caught up by the end of March this year based on current assessment status. Before Welnew Shanghai being ready for production, Vishay Tianjin plant will offer the support as the alternative backup plating site to minimize the impact as more as possible.All the migration plans are kick off and on-going already, including the restart of Welnew Shanghai plant and the alternative plating process inVishay Tianjin plant.
This advisory is being provided to you as an announcement that due to the fire accident on 2023/1/6 afternoon at Welnew Wuxi factory (China), the plating subcon of Vishay Siliconix, it's expected the delivery interruption on specific part types, including TSOP-6, TO-236 (SOT-23), SO-8, PowerPAK 1212-8, Thin PowerPAK 1212-8, PowerPAK SO-8, and 1206-8 ChipFET.Currently all the production activities in Welnew Wuxi plant have been suspended. Vishay Siliconix is cooperating closely with Welnew to restart the alternative production line in Welnew Shanghai. The necessary equipment setup and qualification is estimated to take up to 5 months to get completed and ready for the normal production in May, 2023.
Vishay Siliconix Announces New Material of Solder Paste for Commercial Power MOSFET in PowerPAK 1212 PackagesDESCRIPTION OF CHANGE: To continue the supply of target commercial power MOSFETs, Vishay Siliconix announces the new solder paste, Pb95Sn5, is adopted in PowerPAK 1212 package to replace the original material, Pb88Sn10Ag2, for the yield improvement.REASON FOR CHANGE: Yield ImprovementEXPECTED INFLUENCE ON QUALITY/RELIABILTY/PERFORMANCE: There will be no effect on quality, reliability, performance, and the minimum/maximum values in the datasheet. The material composition of Die-Attach will be changed accordingly as shown in the following page.VISHAY BRAND(s): Vishay SiliconixTIME SCHEDULE:Start Shipment Date: Mon Feb 13, 2023
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SISA04DN-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/sisa04dn-t1-ge3-vishay-1060751
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SISA04DN-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/sisa04dn-t1-ge3-vishay-1060751
Vishay SISA04DN-T1-GE3 - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 2.15mΩ |
| Rated Power Dissipation: | 3.7|W |
| Qg Gate Charge: | 51nC |
| Style d'emballage : | POWERPAK-1212-8 |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The SISA04DN-T1-GE3 is a part of SISA04DN series N-Channel MosFet. It has an operating temperature ranging from -55°C to +150°C.
Features:
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Gen IV Power MOSFET
- 100 % Rg and UIS Tested
- Compliant to RoHS Directive 2002/95/EC
Applications:
- Switch Mode Power Supplies
- Personal Computers and Servers
- Telecom Bricks
- VRM’s and POL
View the complete family of N-Channel MosFet
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
POWERPAK-1212-8
Méthode de montage :
Surface Mount