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Manufacturer Part #

IPP082N10NF2SAKMA1

Single N-Channel 100 V 8.2 mOhm 28 nC StrongIRFET™ 2 Power MOSFET - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2117
Product Specification Section
Technical Attributes
Attributes Table
Series: StrongIRFET™ 2
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 8.2mΩ
Rated Power Dissipation: 3.8W
Qg Gate Charge: 28nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 77A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 15.7ns
Rise Time: 20.3ns
Fall Time: 4.7ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Input Capacitance: 2000pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

Infineon's StrongIRFET™ 2 power MOSFET 100V features low RDS(on) of 8.2 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPP082N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.

 

Summary of Features
 •Broad availability from distribution partners
 •Excellent price/performance ratio
 •Ideal for high- and low-switching frequency
 •Industry standard footprint through-hole package
 •High current rating
 •Capable of wave-soldering

 

Benefits
 •Multi-vendor compatibility
 •Right-fit products
 •Supports a wide variety of applications
 •Standard pinout allows for drop-in replacement
 •Increased current carrying capability
 •Ease of manufacturing

 
Pricing Section
Global Stock:
3,800
Germany (Online Only):
3,800
6,000
Factory Stock:Factory Stock:
0
Minimum Order:
50
Multiple Of:
50
Total
$44.25
USD
Quantity
Web Price
50
$0.885
200
$0.695
750
$0.655
1,250
$0.64
2,500+
$0.62
Product Variant Information section