Référence fabricant
STP80NF10
N-Channel 100 V 15 mOhm Flange Mount STripFET™ II Power MOSFET - TO-220
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| Nom du fabricant: | STMicroelectronics | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) Méthode de montage :Through Hole |
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STMicroelectronics STP80NF10 - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Statut du produit:
STMicroelectronics STP80NF10 - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.015Ω |
| Rated Power Dissipation: | 300W |
| Qg Gate Charge: | 135nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 80A |
| Turn-on Delay Time: | 26ns |
| Turn-off Delay Time: | 116ns |
| Rise Time: | 80ns |
| Fall Time: | 60ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Input Capacitance: | 5500pF |
| Style d'emballage : | TO-220-3 (TO-220AB) |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
The STP80NF10 is a Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.
It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements.
Features:
- Exceptional dv/dt capability
- 100% Avalanche tested
- Application oriented characterization
Applications:
- Switching applications
View the Complete family of STP8 Mosfet Transistors
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)
Méthode de montage :
Through Hole