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Référence fabricant
IRFH5250TRPBF
Single N-Channel 25 V 1.75 mOhm 110 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :4000 par Reel Style d'emballage :PQFN 5 x 6 mm Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2510 | ||||||||||
Infineon IRFH5250TRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change informationSubject:Change of passivation at Infineon Technologies Kulim, Malaysia, for dedicated TISON, TDSON, TSDSON and IQFN productsDescription OldDie passivation - Epoxy resin material ANew:- Epoxy resin material BReason:Ensuring continuity of supply due to end of life of material from supplierIntended start of delivery 2025-08-01
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFH5250TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/irfh5250trpbf-infineon-1183562
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFH5250TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/irfh5250trpbf-infineon-1183562
Infineon IRFH5250TRPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 25V |
| Drain-Source On Resistance-Max: | 1.75mΩ |
| Rated Power Dissipation: | 3.6|W |
| Qg Gate Charge: | 110nC |
| Style d'emballage : | PQFN 5 x 6 mm |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
International Rectifier, a world leader in power management technology, today introduced a family of HEXFET power MOSFETs including the IRFH5250TRPbF that delivers the industry’s lowest on-state resistance (RDS(on)).
The new power MOSFETs featuring IR’s latest silicon technology are the company’s first devices available in a 5x6mm PQFN package with optimized copper clip and solder die. The IRFH5250TRPbF 25V device delivers industry leading RDS(on) of only 1.15 mOhm (max.) at 4.5V Vgs to significantly cut conduction losses for DC motor drive applications such as hand tools.
The 25V IRFH5250TRPbF devices are designed for DC switch applications such as active ORing and DC motor drive applications requiring high current carrying capability and high efficiency. The IRFH5250TRPbF features ultra low RDS(on) of 1.15 mOhm (max.) combined with just 52 nC gate charge (Qg).
The IRFH5250TRPBF is a 25v, 100a, 1.15mohm, PQFN package.
Emballages disponibles
Qté d'emballage(s) :
4000 par Reel
Style d'emballage :
PQFN 5 x 6 mm
Méthode de montage :
Surface Mount