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Référence fabricant
IPW60R099C7XKSA1
Single N-Channel 600 V 99 mOhm 42 nC CoolMOS™ Power Mosfet - TO-247-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :30 par Tube Style d'emballage :TO-247-3 Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
Infineon IPW60R099C7XKSA1 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Introduction of an additional assembly and test location site, Tongfu Tongke (Nantong) Microelectronics Co., Ltd. (TFTK) for TO247-3 products.Detailed change information:Subject:Introduction of an additional assembly and final test location site, Tongfu Tongke (Nantong) Microelectronics Co., Ltd. (TFTK) forTO247-3 products.Reason :Expansion of assembly and test location to assure continuity and increase of supply
Introduction of an additional assembly and final test location at Huayi Microelectronics Co., Ltd (HYME) for CoolMOSTM for package TO247-3Subject Introduction of an additional assembly and final test location at Huayi Microelectronics Co., Ltd (HYME) for CoolMOSTM for package TO247-3.Reason Expansion of assembly and test location to assure continuity and increase of supply.Intended start of delivery 2023-02-25, or earlier, depending on customer?s approval
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IPW60R099C7XKSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/ipw60r099c7xksa1-infineon-4082923
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IPW60R099C7XKSA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/ipw60r099c7xksa1-infineon-4082923
Infineon IPW60R099C7XKSA1 - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 99mΩ |
| Rated Power Dissipation: | 110|W |
| Qg Gate Charge: | 42nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 22A |
| Turn-on Delay Time: | 11.8ns |
| Turn-off Delay Time: | 54ns |
| Rise Time: | 8ns |
| Fall Time: | 4.5ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3.5V |
| Technology: | CoolMOS |
| Height - Max: | 21.1mm |
| Length: | 16.13mm |
| Input Capacitance: | 1819pF |
| Style d'emballage : | TO-247-3 |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
30 par Tube
Style d'emballage :
TO-247-3
Méthode de montage :
Through Hole