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Référence fabricant
SI6562CDQ-T1-GE3
Si6562CDQ Series 20 V 0.022 Ohm SMT Dual N & P Channel MOSFET - TSSOP-8
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :TSSOP-8 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2342 | ||||||||||
Vishay SI6562CDQ-T1-GE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Reason for Change: Manufacturing Capacity Expansion
Description of Change: .To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments.Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Reason for Change: Manufacturing Capacity Expansion
Statut du produit:
Vishay SI6562CDQ-T1-GE3 - Caractéristiques techniques
| Fet Type: | Dual N/P-Ch |
| Drain-to-Source Voltage [Vdss]: | 20V/-20V |
| Drain-Source On Resistance-Max: | 22mΩ/30mΩ |
| Rated Power Dissipation: | 1.2|W |
| Qg Gate Charge: | 15nC/34nC |
| Style d'emballage : | TSSOP-8 |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
TSSOP-8
Méthode de montage :
Surface Mount