Référence fabricant
IRF730APBF
Single N-Channel 400 V 1 Ohm Flange Mount Power MosFet - TO-220AB
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220-3 (TO-220AB) Méthode de montage :Flange Mount |
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Vishay IRF730APBF - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Statut du produit:
Vishay IRF730APBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 400V |
| Drain-Source On Resistance-Max: | 1Ω |
| Rated Power Dissipation: | 74|W |
| Qg Gate Charge: | 22nC |
| Style d'emballage : | TO-220-3 (TO-220AB) |
| Méthode de montage : | Flange Mount |
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220-3 (TO-220AB)
Méthode de montage :
Flange Mount