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Référence fabricant

FDMA2002NZ

MLP6, 30V, 2.9A, DUAL, NCH POWER TRENCH MOSFET

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date: 2423
Product Specification Section
onsemi FDMA2002NZ - Caractéristiques techniques
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 123mΩ
Rated Power Dissipation: 650|mW
Qg Gate Charge: 2.4nC
Méthode de montage : Surface Mount
Fonctionnalités et applications

The FDMA2002NZ is a part of FDMA series of 30 V 123 mOhm Dual N-Channel PowerTrench Mosfet and it's Available in MicroFET 2X2 Package. 

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

Product Specifications:

  • LI class="style1"2.9 A, 30 V RDS(ON) = 123 mΩ @ VGS = 4.5 V RDS(ON) = 140 mΩ @ VGS = 3.0 V RDS
  • ON) = 163 mΩ @ VGS = 2.5 V LI class="style1"Low profile - 0.8 mm maximum - in the new package
  • MicroFET 2x2 mm
  • span class="style1"HBM ESD protection level=1.8kV (Note 3)
  • span class="style1"RoHS Compliant LI class="style1"Free from halogenated compounds and intimonyoxides/span

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Access Point/Router
  • Medical Electronics/Devices
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
12 Semaines
Commande minimale :
3000
Multiples de :
3000
Total 
900,00 $
USD
Quantité
Prix unitaire
3 000
$0.30
6 000
$0.295
12 000
$0.29
15 000+
$0.285
Product Variant Information section