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Référence fabricant

IRF7832TRPBF

Single N-Channel 30V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date: 2314
Product Specification Section
Infineon IRF7832TRPBF - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 4.8mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 51nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 20A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 21ns
Rise Time: 6.7ns
Fall Time: 13ns
Operating Temp Range: -55°C to +155°C
Gate Source Threshold: 2.32V
Technology: Si
Height - Max: 1.5mm
Length: 5mm
Input Capacitance: 4310pF
Style d'emballage :  SOIC-8
Méthode de montage : Surface Mount
Fonctionnalités et applications
The 30-V IRF7832 synchronous buck converters are aimed at mobile communication architectures. The IRF7832 offers a 4-mohm maximum on-resistance at 10 V, making it an ideal fit for applications needing a synchronous MOSFET. This IC can also be used as a secondary-side synchronous rectification in isolated converters.  For More information, please see the datasheet.The IRF7832TRPBF comes in an SO-8 package.  The TR indicates Tape and Reel, and the PBF indicates Leadfree.
Pricing Section
Stock global :
16 000
États-Unis:
16 000
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
14 Semaines
Commande minimale :
4000
Multiples de :
4000
Total 
1 420,00 $
USD
Quantité
Prix unitaire
4 000
$0.355
8 000
$0.35
16 000
$0.345
20 000+
$0.34
Product Variant Information section