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Référence fabricant
IXGN200N60B3
IXGN Series 600 Vce 300 A 44 ns t(on) Medium Speed IGBT - SOT-227B
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| Nom du fabricant: | Littelfuse - IXYS | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :10 par Tube Style d'emballage :SOT-227B Méthode de montage :Chassis Mount | ||||||||||
| Code de date: | |||||||||||
Littelfuse - IXYS IXGN200N60B3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
SUBJECT: Assembled Device Marking Format Changes and Outer Box/Bag Label Format Changes - Change to the assembled device marking format The change affects the date code and tracking number identification. This change does not affect the form, fit or function of the product. See attached for more details - Change to the box label format: The paper sticker label found on the outer box or bag will see a format change that incorporates the Littelfuse logo along with the IXYS logo. The printed information remains the same (PN, Qty, Lot #, date code, country of origin). The change allows for a improved readability. This change does not affect the form, fit or function of the product. REMARKS: This changes from the original IXYS Corporation marking/labeling format to the new IXYS LLC-USA format is being done to conform to the SAP product management system requirements of our parent company Littelfuse Corporation.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IXGN200N60B3&field4=Littelfuse - IXYS&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--igbts/ixgn200n60b3-littelfuse-ixys-6080675
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IXGN200N60B3&field4=Littelfuse - IXYS&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--igbts/ixgn200n60b3-littelfuse-ixys-6080675
Littelfuse - IXYS IXGN200N60B3 - Caractéristiques techniques
| CE Voltage-Max: | 600V |
| Collector Current @ 25C: | 300A |
| Power Dissipation-Tot: | 830W |
| Turn-on Delay Time: | 44ns |
| Turn-off Delay Time: | 310ns |
| Style d'emballage : | SOT-227B |
| Méthode de montage : | Chassis Mount |
Fonctionnalités et applications
The IXGN200N60B3 is a 600 V Medium-speed low-Vsat PT Insulated gate bipolar transistor for 5-40 KHz switching.
Features:
- International Standard Package miniBLOC
- UL Recognized
- Aluminium Nitride Isolation
- High Power Dissipation
- Isolation Voltage 3000 V~
- Very High Current IGBT
- Low VCE(sat) for Minimum on-state Conduction Losses
- MOS Gate Turn-On
- Drive Simplicity
- Low Collector-to-Case Capacitance (< 50 pF)
- Low Package Inductance (< 5 nH)
- Easy to Drive and to Protect
Advantages:
- High Power Density
- Low Gate Drive Requirement
Applications:
- Switch-Mode and Resonant-Mode Power Supplies
- Uninterruptible Power Supplies (UPS)
- DC Choppers
- AC Motor Speed Drives
- DC Servo and Robot Drives
Emballages disponibles
Qté d'emballage(s) :
10 par Tube
Style d'emballage :
SOT-227B
Méthode de montage :
Chassis Mount