Référence fabricant
SPD30P06PGBTMA1
Single P-Channel 60 V 75 mOhm 32 nC SIPMOS® Power Mosfet - TO-252-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :2500 par Reel Style d'emballage :TO-252-3 (DPAK) Méthode de montage :Surface Mount |
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| Code de date: | 2440 | ||||||||||
Infineon SPD30P06PGBTMA1 - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Detailed change informationSubject Transfer of wafer production, wafer test and pre-assembly location to IFX Kulim, and change of wafer diameter from 150 mm to 200 mm, and implementation of new mould compound for PG-TO252 package, for P-Channel Small Signal and Power MOSFETsReason Wafer production, wafer test and pre-assembly location will be transferred according to the global Infineon production strategyDescription Wafer production and wafer test locationWafer diameterPre-assembly location Wafer LotnumberMould compound(PG-TO252)Halogen Free Flag (PG-TO252)OPN incl. SP#(PG-TO252)Production Lot code Marking on device (PG-TO252) Note: See SPCN document for detailed description of changesIntended start of delivery 2026-03-31 or earlier based on customer approval
Statut du produit:
Infineon SPD30P06PGBTMA1 - Caractéristiques techniques
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 75mΩ |
| Rated Power Dissipation: | 125|W |
| Qg Gate Charge: | 32nC |
| Style d'emballage : | TO-252-3 (DPAK) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
2500 par Reel
Style d'emballage :
TO-252-3 (DPAK)
Méthode de montage :
Surface Mount