text.skipToContent text.skipToNavigation

Truck-Icon.svg Free shipping within the continental US over $50. Conditions apply

warning.svg Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. IGBTs
  6. IKW75N65EL5XKSA1

Infineon | IKW75N65EL5XKSA1

Manufacturer Part #

IKW75N65EL5XKSA1

IKW75N65EL5 Series 650 V 80 A 536 W Through Hole IGBT - TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2552
Product Specification Section
Infineon IKW75N65EL5XKSA1 - Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 80A
Power Dissipation-Tot: 536W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 300A
Collector - Emitter Saturation Voltage: 1.1V
Turn-on Delay Time: 40ns
Turn-off Delay Time: 275ns
Qg Gate Charge: 436nC
Reverse Recovery Time-Max: 114ns
Leakage Current: 100nA
Input Capacitance: 12100pF
Operating Temp Range: -40°C to +175°C
No of Terminals: 3
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
600
USA:
600
On Order:Order inventroy details
2,880
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
10
Multiple Of:
1
Total
$41.90
USD
Quantity
Unit Price
10
$4.19
30
$4.13
100
$4.07
300
$4.02
1,000+
$3.91
Product Variant Information section