Référence fabricant
FQPF13N50CF
N-Channel 500 V 0.54 Ohm Flange Mount Mosfet - TO-220F
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| Nom du fabricant: | onsemi | ||||||||||
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Product Variant Information section
Emballages disponiblesQté d'emballage(s) :1000 par Tube Style d'emballage :TO-220F Méthode de montage :Through Hole |
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onsemi FQPF13N50CF - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Statut du produit:
onsemi FQPF13N50CF - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 500V |
| Drain-Source On Resistance-Max: | 0.48Ω |
| Rated Power Dissipation: | 44|W |
| Qg Gate Charge: | 43nC |
| Style d'emballage : | TO-220F |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
The FQPF13N50CF is a N-Channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
Features:
- 13 A, 500 V, RDS(on) = 0.54 O @VGS = 10 V
- Low gate charge (typical 43 nC)
- Low Crss (typical 20 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Fast recovery body diode (typical 100ns)
Applications:
- TBA
View the complete FQPF13 series of Mosfets
Emballages disponibles
Qté d'emballage(s) :
1000 par Tube
Style d'emballage :
TO-220F
Méthode de montage :
Through Hole