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onsemi | FDB52N20TM

Manufacturer Part #

FDB52N20TM

N-Channel 200 V 0.049 Ohm Surface Mount UniFET Mosfet - D2PAK-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2433
Product Specification Section
onsemi FDB52N20TM - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 0.049Ω
Rated Power Dissipation: 357|W
Qg Gate Charge: 49nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The FDB52N20TM is a Part of FDB52N20 Series 200 V 0.049 Ω N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features :

  • 52 A, 200 VRDS(on) = 0.049 mΩ @ VGS = 10 V
  • Low gate charge ( typical 49 nC)
  • Low Crss ( typical 66 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications:

  • High efficient S.M.P.S
  • Active power factor correction
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
6 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$928.00
USD
Quantity
Unit Price
800
$1.16
1,600
$1.15
2,400
$1.14
4,000+
$1.13
Product Variant Information section