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Référence fabricant
SIA911ADJ-T1-GE3
20V, 4.5A, 0.116 OHM, DUAL, P-CHANNEL, PPAK SC-70-6
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :POWERPAK-SC-70-6L Méthode de montage :Surface Mount | ||||||||||
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Vishay SIA911ADJ-T1-GE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: Vishay Siliconix announces the new expoxy material, ABP6395T from Henkel, adopted in PowerPAK SC70 package for continuously yield improvement in in-house Simconix manufacturing factoryReason for Change: Continuously yield improvementTime Schedule: Start Shipment Date: Friday November 21, 2025
Description of Change: To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Reason for Change: Manufacturing Capacity Expansion
Description of Change: .To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix announces the qualification of the new solder-plating site, Welnew-Shanghai, in Shanghai city, China. This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai.Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments.Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Reason for Change: Manufacturing Capacity Expansion
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SIA911ADJ-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/sia911adj-t1-ge3-vishay-9042659
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SIA911ADJ-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/it/p/semiconductors--discretes--transistors--mosfets/sia911adj-t1-ge3-vishay-9042659
Vishay SIA911ADJ-T1-GE3 - Caractéristiques techniques
| Fet Type: | Dual P-Ch |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 116mΩ |
| Rated Power Dissipation: | 1.8|W |
| Qg Gate Charge: | 8.4nC |
| Style d'emballage : | POWERPAK-SC-70-6L |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
POWERPAK-SC-70-6L
Méthode de montage :
Surface Mount