Référence fabricant
SI1308EDL-T1-GE3
Single N-Channel 30 V 0.4 W 4.1 nC Silicon Surface Mount Mosfet - SOT-323
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :SOT-323 (SC-70) Méthode de montage :Surface Mount |
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| Code de date: | 2311 | ||||||||||
Vishay SI1308EDL-T1-GE3 - Spécifications du produit
Informations de livraison:
Code HTS:
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Informations PCN:
Description of Change: To meet the increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer BGBM process (Backside-Grind and Backside-Metallization) for commercial Low-Voltage Power MOSFETs at in-house Siliconix Philippines Inc.(SPI) facility in Binan, Philippines.Reason for Change: Capacity Expansion
Statut du produit:
Vishay SI1308EDL-T1-GE3 - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 0.185Ω |
| Rated Power Dissipation: | 0.4W |
| Qg Gate Charge: | 4.1nC |
| Gate-Source Voltage-Max [Vgss]: | 12V |
| Drain Current: | 1.5A |
| Turn-on Delay Time: | 2ns |
| Turn-off Delay Time: | 8ns |
| Rise Time: | 20ns |
| Fall Time: | 12ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.5V |
| Technology: | Si |
| Height - Max: | 1mm |
| Length: | 2.2mm |
| Input Capacitance: | 105pF |
| Style d'emballage : | SOT-323 (SC-70) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
SOT-323 (SC-70)
Méthode de montage :
Surface Mount